Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth
作者： Yunrui He , Jun Wang , Haiyang Hu , Qi Wang , Yongqing Huang
DOI: 10.1063/1.4921621
关键词:
摘要: The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm buffer layer Si via metal-organic chemical vapor deposition. We propose a promising method three-stage epitaxial lateral overgrowth (ELO) to achieve uniform and flat surface. Rough surface caused by the different growth fronts is smoothened this method. Low root-mean-square roughness 6.29 nm obtained 410-nm-thick coalesced ELO layer. Cross-sectional transmission electron microscope study shows that will induce some new dislocations. However, coalescence-induced dislocations tend mutually annihilate only small part them reach High optical quality confirmed low temperature (77 K) photoluminescence measurements. This research promises very large scale integration platform for monolithic GaAs-based device Si.
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