MESFET lift-off from GaAs substrate to glass host
作者： C. van Hoof , W. de Raedt , M. van Rossum , G. Borghs
DOI: 10.1049/EL:19890099
关键词: MESFET 、 Epitaxy 、 Materials science 、 Gallium arsenide 、 Electronic engineering 、 Lift (force) 、 Molecular beam epitaxy 、 Optoelectronics 、 Semiconductor device fabrication 、 Field-effect transistor 、 Transconductance
摘要: We report for the first time on epitaxially grown fully processed MESFETs lifted off from GaAs substrate and deposited glass as a new host material. The layer thickness of epitaxial film was 0.5 μm. Very good device performance obtained with gm values 155mS/mm. This opens interesting possibilities hybrid or monolithic integration III-V technology other materials technologies.
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