Epitaxial Liftoff Technology For OEIC's

作者: E. Yablonovitch , W. K. Chan , A. Yi-Yan

DOI: 10.1063/1.40642

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摘要: Abstract : Epitaxial liftoff permits the integration of III-V films and devices onto arbitrary material substrates. This paper will review Bellcore's work on optoelectronic optical transmitter receiver LiNbO3, glass, Silicon sapphire In field electronic materials there has been a persistent interest in high quality epitaxial thin film semiconductor layers with crystalline or glass For example, GaAs substrates would allow combination two technologies. led to massive effort lattice mis-matched heteroepitaxial growth. Recently, however, new more flexible approach attracting increasing attention.

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