作者: W.K. Chan , A. Yi-Yan , T.J. Gmitter , L.T. Florez , J.L. Jackel
DOI: 10.1109/68.50887
关键词:
摘要: The optical coupling of GaAs photodetectors integrated with LiNbO/sub 3/ waveguides using epitaxial liftoff is measured and compared to calculations based on a complex index model. found be comparable that obtained in semiconductor waveguide detectors, but it lower than expected. Low efficiency attributed the presence low barrier layer, not present semiconductor-based structures, at GaAs-LiNbO/sub interface. A simple method restoring its original value without need eliminate layer proposed. >