Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials

摘要: We propose paramorphic growth as a new approach for growing thick, ideally relaxed, epitaxial layers on mismatched substrates. First, thin seed layer, originally grown pseudomorphically strained substrate coated with sacrificial is separated by chemical etching from its original and subsequently deposited the final after being elastically relaxed. Consequently, thick layers, lattice matched to cubic-relaxed can be epitaxially without introduction of any structural defects. The validity this demonstrated fully relaxed In0.65Ga0.35As 300×300 µm2 platforms an InP substrate, using molecular beam epitaxy.