Mesa release and deposition (MRD) method for stress relief in heteroepitaxially grown GaAs on Si

摘要: A mesa release and deposition (MRD) method realizes stress relief in GaAs layers on Si, useful practical device applications. thin AlAs layer is incorporated the heteroepitaxial about lμm from GaAs/Si interface. Mesas are etched down to subsequently underetched a 5% HF-solution at room temperature. Photoresist clamps keep mesas their exact position during underetch process which results self-aligned re-deposition substrate after resist removal. Spatially resolved photoluminescence Si before MRD was used demonstrate relief. epitaxy thereafter grown mesas. assess strain level regrown layer. In contrast expected shift splitting of valence band biaxially strained GaAs/Si, it found that peak band-to-band optical transition GaAs/MRD/Si reference 77K only 4nm no observed for