Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaN
作者： S. J. Chung , O. H. Cha , H. K. Cho , M. S. Jeong , C-H. Hong
DOI: 10.1557/PROC-595-F99W11.83
关键词: Vacancy defect 、 Luminescence 、 Photocurrent 、 Analytical chemistry 、 Acceptor 、 Materials science 、 Chemical vapor deposition 、 Impurity 、 Spectroscopy 、 Doping
摘要: The defect levels associated with Mg impurity in p-type GaN films were systematically investigated terms of doping concentration by photocurrent spectroscopy. Mg-doped samples grown on sapphire substrate metal organic chemical vapor deposition and annealed nitrogen atmosphere at 850 for 10 minutes. At room temperature, PC spectra showed two peaks 3.31 3.15 eV acceptor formed 300 142 meV above valence band as samples. But, after the thermal annealing, exhibited various additional depending concentration. In around 6 7 1017 cm−3, we have observed related to well 3.02 carbon 3.17 eV. For moderately doped samples, i.e., hole p=3 4 peak was 0.9 which can be attributed defects Ga vacancy. relatively low whose concentrations are 1 2 broad 1.3 This may yellow luminescence. As is increased, vacancies reduced because occupies substitutional site lattice. When luminescence vacancy disappeared completely.
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