作者: C. Martin , K.H. Miller , H. Makino , D. Craciun , D. Simeone
DOI: 10.1016/J.JNUCMAT.2017.02.041
关键词: Ion 、 Crystallite 、 Nanocrystalline material 、 Pulsed laser deposition 、 Irradiation 、 Photoemission spectroscopy 、 Thin film 、 Analytical chemistry 、 Materials science 、 Fluence
摘要: Abstract Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on electronic properties nanocrystalline ZrC ZrN thin films, which were obtain by pulsed laser deposition technique. Both in ZrN, observed that affects films mostly at low frequencies, is dominated free carriers response. In both materials, found a significant reduction scattering rate an increase zero frequency conductivity, i.e. possible mobility, higher fluence. This consistent with our previous findings crystallite size micro-strain, but it does not induce major changes chemical bonding. HE-XPS investigations further confirms stability Zr-C Zr-N bonds, despite small surface region Zr-O bonds fraction increasing