On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1-xAs heterostructures
作者： E J Koop , M J Iqbal , F Limbach , M Boute , B J van Wees
DOI: 10.1088/0268-1242/28/2/025006
关键词: Analytical chemistry 、 Low resistance 、 Heterojunction 、 Ohmic contact 、 Condensed matter physics 、 Annealing (metallurgy) 、 Fermi gas 、 X-ray absorption spectroscopy 、 Materials science 、 Transmission electron microscopy
摘要: … contacts is annealing of a AuGe/Ni/Au alloy that has been … how the quality of AuGe/Ni/Au based ohmic contacts depend … fixed typical layer thicknesses for the AuGe/Ni/Au stack, but we …
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