Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time
作者： Jenifar Sultana , Somdatta Paul , Anupam Karmakar , Ren Yi , Goutam Kumar Dalapati
DOI: 10.1016/J.APSUSC.2016.12.139
关键词: Chemical bath deposition 、 Refractive index 、 Thin film 、 Materials science 、 X-ray photoelectron spectroscopy 、 Oxide 、 Nanotechnology 、 Dielectric 、 Chemical engineering 、 Silicon 、 Substrate (electronics)
摘要: Abstract Thin film of p-type cupric oxide ( p -CuO) is grown on silicon (n-Si) substrate by using chemical bath deposition (CBD) technique and a precise control thickness from 60 nm to 178 nm has been achieved. The structural properties stoichiometric composition the films are observed depend significantly growth time. composition, optical properties, quality investigated in detail employing XRD, ellipsometric measurements SEM images. Also, elemental oxidation states Cu O samples have studied XPS measurements. 110 nm thicknesses exhibited best performance terms crystal quality, refractive index, dielectric constant, band-gap, properties. study suggests synthesis route for developing high CuO thin CBD method electronic applications.
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