Scattering matrix theory of transport in heterostructures
作者： A C Marsh , J C Inkson
DOI: 10.1088/0268-1242/1/4/008
关键词: Condensed matter physics 、 Electron 、 Double barrier 、 Matrix formalism 、 Scattering 、 Chemistry 、 Heterojunction 、 Pseudopotential 、 Superlattice 、 Tunnel junction
摘要: A scattering matrix formalism is developed for the transport of electrons in heterostructures. It shown how approach may be used to calculate properties superlattices and non-periodic devices. The applied, within an empirical pseudopotential model, calculation tunnel junction fluxes through a GaAs/AlAs double barrier structure. When comparison analysis conventional one-band effective-mass model made, significant deviations between two approaches are found result.
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sci-hub.se 参考文章(19)
C Mailhiot, DL Smith, TC McGill, Transport characteristics of L-point and Γ-point electrons through GaAs–Ga1−xAlxAs–GaAs(111) double heterojunctions Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 1, pp. 637- 642 ,(1983) , 10.1116/1.582568
Federico Capasso, Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 1, pp. 457- 461 ,(1983) , 10.1116/1.582627
A C Marsh, The eigenvalues of very narrow quantum wells Semiconductor Science and Technology. ,vol. 1, pp. 237- 239 ,(1986) , 10.1088/0268-1242/1/4/001
A C Marsh, J C Inkson, An empirical pseudopotential analysis of (100) and (110) GaAs-AlxGa1-xAs heterojunctions Journal of Physics C: Solid State Physics. ,vol. 19, pp. 43- 52 ,(1986) , 10.1088/0022-3719/19/1/011
J. N. Schulman, Yia-Chung Chang, Band mixing in semiconductor superlattices Physical Review B. ,vol. 31, pp. 2056- 2068 ,(1985) , 10.1103/PHYSREVB.31.2056
Warren E. Pickett, Steven G. Louie, Marvin L. Cohen, Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs Physical Review B. ,vol. 17, pp. 815- 828 ,(1978) , 10.1103/PHYSREVB.17.815
Vijai K. Tripathi, Pallab K. Bhattacharya, Electron energy states and miniband parameters in a class of non-uniform quantum well and superlattice structures Superlattices and Microstructures. ,vol. 1, pp. 73- 79 ,(1985) , 10.1016/0749-6036(85)90032-1
A. Marsh, J. Inkson, The electronic properties of GaAs/AlGaAs heterojunctions IEEE Journal of Quantum Electronics. ,vol. 22, pp. 58- 66 ,(1986) , 10.1109/JQE.1986.1072865
JM Pimbley, T‐M Lu, None, Atomic correlations during the first stages of epitaxy Journal of Vacuum Science and Technology. ,vol. 2, pp. 457- 460 ,(1984) , 10.1116/1.572365
T. Nakagawa, N.J. Kawai, K. Ohta, Design principles for CHIRP superlattice devices Superlattices and Microstructures. ,vol. 1, pp. 187- 192 ,(1985) , 10.1016/0749-6036(85)90119-3