Matching of electronic wavefunctions and envelope functions at GaAs/AlAs interfaces

作者: J P Cuypers , W van Haeringen

DOI: 10.1088/0953-8984/4/10/021

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摘要: A method to calculate electronic wavefunctions and energies in AlGaAs heterostructures is developed applied some typical configurations. The based on the use of empirical pseudopotentials applicability flat-band approximation. Coupling Gamma - X-like conduction-band electrons explicitly dealt with. Emphasis put precise matching at interfaces as well connection rules for related envelope functions. Among other things, authors do not find evidence boundary conditions derivatives functions involving effective mass ratios.

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