Nanomachining of mesoscopic electronic devices using an atomic force microscope
作者： H. W. Schumacher , U. F. Keyser , U. Zeitler , R. J. Haug , K. Eberl
DOI: 10.1063/1.124611
关键词: Nanotechnology 、 Heterojunction 、 Fabrication 、 Mesoscopic physics 、 Fermi gas 、 Transistor 、 Materials science 、 Quantum tunnelling 、 Machining 、 Gallium arsenide
摘要: An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion induced by repeated mechanical scribing surface layers heterostructure using AFM tip. Measuring room-temperature resistance across scribed lines during fabrication provides in situ control 2DEG. Variation such tunes their low-temperature characteristics from tunneling up insulating behavior. Using this technique, an in-plane-gate transistor and single-electron were fabricated.
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