Field- and optically induced electron emission from tin oxide films
作者： J Olesik , M Malachowski
DOI: 10.1016/S0040-6090(02)00967-7
关键词: Electron gun 、 Thin film 、 Analytical chemistry 、 Field electron emission 、 Chemistry 、 Semiconductor 、 Field effect 、 Indium tin oxide 、 Tin oxide 、 Sputter deposition
摘要: Abstract Electron emission properties of Sb- or Sn-doped indium tin oxide (ITO) thin semiconductor films have been studied. These were deposited using a constant-current ion sputtering method onto the surfaces glass slide. On one side 1-μm-thick film was as field electrode, and on other side, 10–200 nm an electron emitter. The examined electric field-induced emission. investigation showed that in glass–ITO systems photoemission occur, with yield depending intensity emitter, ITO thickness composition film. occurs when polarizing voltage is applied and/or UV-illuminated. A phenomenological model partition into two zones, depleted enhanced carriers, given to explain effects observed.
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