Electrical and optical properties of conducting N-type Cd2SnO4 thin films
作者： E. Leja , T. Stapiński , K. Marszałek
DOI: 10.1016/0040-6090(85)90404-3
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摘要: Abstract Polycrystalline Cd 2 SnO 4 thin films were prepared by d.c. reactive sputtering from CdSn alloy targets. X-ray spectroscopy revealed that the tin cations occupy octahedral sites in a spinel structure. Mossbauer measurements confirmed this result. Measurements of electron concentration, mobility and thermoelectric power as functions temperature degenerate semiconductors. The electrical properties after post-deposition heat treatment oxygen indicated origin free carriers nature scattering process. fundamental absorption edge showed Burstein shift. effective mass was calculated IR plasma reflection.
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