Horizontal junction field-effect transistor
作者： Shin Harada , Kenichi Hirotsu
DOI:
关键词: Yield (engineering) 、 Optoelectronics 、 Electrode 、 Electronic engineering 、 JFET 、 Field-effect transistor 、 Materials science 、 Sic substrate
摘要: A horizontal SiC JFET including a high-mobility-carrier channel region is manufactured with high yield using an n-type substrate. The comprises substrate (1n), p-type film (2) formed on the front surface of substrate, (3) and (11), source drain regions (22, 23) separated by region, gate electrode (14) in contact (in).
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