作者: Lawrence G. Matus , J. Anthony Powell , David J. Larkin , Philip G. Neudeck
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摘要: A method of growing atomically-flat surfaces and high-quality low-defect crystal films polytypic compounds heteroepitaxially on compound substrates that are different than the film. The is particularly suited for growth 3C-SiC, 2H-AlN, 2H-GaN 6H-SiC.