Field effect transistors and fabrication of integrated circuits containing the transistors

摘要: A field effect transistor (FET) wherein the insulator is nonrecessed with respect to source and drain regions, sides of polysilicon gate electrode are self-aligned nonconductive neither overlap nor underlap insulator. The lateral dimensions location correlate directly channel region FET. fabrication technique employed comprises delineating lithographic patterns twice in same layer; whereby first pattern delineates regions be used for sources drains, next forms regions.