作者: Jong-Hyun Lee
DOI:
关键词: Test structure 、 Voltage 、 Structural engineering 、 Test method 、 Semiconductor device 、 Materials science 、 Optoelectronics 、 Defect size
摘要: A test structure and method for testing a semiconductor device are provided. The including first pattern having plurality of electrically separated metal patterns, vias formed in opposite end portions the respective second connected to through vias. By using this structure, presence, nature, size failure can be detected by analyzing resistance arising from application voltage pattern.