Adsorption and desorption kinetics for SiH2Cl2 on Si(111) 7×7

作者: P. A. Coon , P. Gupta , M. L. Wise , S. M. George

DOI: 10.1116/1.578052

关键词: Thermal desorptionAdsorptionChemical vapor depositionThermal desorption spectroscopyChemistryAnalytical chemistryDesorptionKineticsDichlorosilaneSticking coefficient

摘要: The adsorption and desorption kinetics for dichlorosilane (SiH2Cl2) on Si(111) 7×7 were studied using laser‐induced thermal (LITD) temperature programmed (TPD) techniques. TPD experiments monitored H2, HCl, SiCl2 products at 810, 850, 1000 K, respectively. also observed in the LITD yield all surface coverages. In agreement with studies, linear ramp disappearance of signals K. measurements determined initial reactive sticking coefficient (S0) SiH2Cl2 versus temperature. was S0≊0.36 temperatures from 150 to 200 Above decreased S0≊0.10 350 K S0≊0.0025 850 temperature‐dependent consistent a precursor‐mediated model. As function coverage following expo...

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