ENERGY CAPACITY OF A VOLTAGE-DEPENDENT CAPACITOR FOR THE CALCULATION OF MOSFET's SWITCHING LOSS
作者： YOUTHANA KULVITIT
DOI: 10.1142/S0218126613400069
关键词: Calculation technique 、 Capacitor 、 Voltage 、 Electronic engineering 、 Parasitic capacitance 、 Electrical engineering 、 Capacitance 、 Materials science 、 MOSFET 、 Energy (signal processing)
摘要: Energy capacity of a voltage-dependent capacitor is investigated and defined. An equation for the calculation energy MOSFET's parasitic capacitance formulated. The defined can be used to calculate switching loss resonant switches by simply calculating transferred into or retrieved from MOSFET. validity proposed formula verified computer simulation. discrepancy between calculated formulated that results simulation negligible. Computer also validate switching-loss technique.
sci-hub.se 参考文章(3)
M. Trivedi, K. Shenai, Modeling the turn-off of IGBT's in hard- and soft-switching applications IEEE Transactions on Electron Devices. ,vol. 44, pp. 887- 893 ,(1997) , 10.1109/16.568054
Toshihisa Shimizu, Keiji Wada, A gate drive circuit of power MOSFETs and IGBTs for low switching losses international conference on performance engineering. pp. 857- 860 ,(2007) , 10.1109/ICPE.2007.4692507
Y. Kulvitit, P. Opanuruk, T. Tansatit, Effects of Internal Feedback and Gate-Drive Signal on the Turn-Off Loss of MOSFET ZVS IEEE Transactions on Industry Applications. ,vol. 45, pp. 2064- 2072 ,(2009) , 10.1109/TIA.2009.2031926