New ZVS analysis of PWM converters applied to super-junction, GaN and SiC power FETs
作者： Rais Miftakhutdinov
DOI: 10.1109/APEC.2015.7104372
关键词:
摘要: High efficiency and power density conversion requires minimizing switching losses associated with FET Coss recharging. Experiments show significant differences between small-signal based data provided in datasheets versus large signal behavior of FETs for new Si super-junction, SiC GaN technologies. Thus, better accuracy models are suggested analytical ZVS conditions established popular PWM converter topologies allowing meet goals at wide operating range.
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