Influence of polymer formation on the angular dependence of reactive ion beam etching

摘要: The decreasing dimensions and increasing complexity of very large scale integrated circuits will also result in a more complex topography. There be an demand for simulation programs order to accurately predict the topography during, e.g., dry etching. Such need information about angular dependence etch rate used process. can measured every specific process results as input data program. A general knowledge may contribute substantially development future programs. has been studied Si3N4 using Kaufman type ion beam source CHF3+O2 processing gas mixture. experimental confirm that formation polymer layer plays important role case Si3N4. We have found it is possible change extent by varying O2 content This because oxygen strongly affect on etched surface. physical sputtering with Ar chemical CF4 such polymer, deposited from CHF3, studied.