A Review of SiO2 Etching Studies in Inductively Coupled Fluorocarbon Plasmas

摘要: A comprehensive overview of results from mechanistic studies on plasma-surface interactions in inductively coupled fluorocarbon plasmas, which are currently widely used for the SiO 2 etching process semiconductor device manufacturing industry, is presented. The that covered this range at plasma reactor wall and coupling window, affect gas phase, to substrate level determine both blanket surfaces microscopic features, In particular, effects temperature parasitic capacitive addressed. Further, mechanism selective Si 3 N 4 inclined discussed, Finally, it shown how etch high aspect ratio microstructures differs surfaces.