Ion beam experiments for the study of plasma?surface interactions
作者： Kazuhiro Karahashi , Satoshi Hamaguchi
DOI: 10.1088/0022-3727/47/22/224008
关键词:
摘要: Experimental studies based on mass-selected ion beams are reviewed as a means to examine plasma–surface interactions for industrial plasma processing. Plasma etching and deposition processes widely used in the microelectronics industry exploit surface chemical reactions induced by plasmas. Such typically result from conglomeration of complex material with incident free radicals ions. While it is general difficult analyse individual separately system, and/or charge-neutral beam experiments allow one specific involving only selected gaseous species. In this review, beam–surface discussed detail reaction data silicon surfaces presented sample data.
harvard.edu
sci-hub.se 参考文章(80)
Makoto Sekine, Dielectric film etching in semiconductor device manufacturing: Development of SiO2 etching and the next generation plasma reactor Applied Surface Science. ,vol. 192, pp. 270- 298 ,(2002) , 10.1016/S0169-4332(02)00031-4
Tomoko Ito, Kazuhiro Karahashi, Masanaga Fukasawa, Tetsuya Tatsumi, Satoshi Hamaguchi, Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions Journal of Vacuum Science and Technology. ,vol. 29, pp. 050601- ,(2011) , 10.1116/1.3610981
Miyako Matsui, Tetsuya Tatsumi, Makoto Sekine, Relationship of etch reaction and reactive species flux in C4F8/Ar/O2 plasma for SiO2 selective etching over Si and Si3N4 Journal of Vacuum Science and Technology. ,vol. 19, pp. 2089- 2096 ,(2001) , 10.1116/1.1376709
Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, Moritaka Nakamura, Etching yield of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV Journal of Vacuum Science and Technology. ,vol. 22, pp. 1166- 1168 ,(2004) , 10.1116/1.1761119
Yasuo Murakami, Seishi Horiguchi, Satoshi Hamaguchi, Molecular dynamics simulation of the formation of sp3 hybridized bonds in hydrogenated diamondlike carbon deposition processes. Physical Review E. ,vol. 81, pp. 041602- ,(2010) , 10.1103/PHYSREVE.81.041602
M. E. Barone, D. B. Graves, Chemical and physical sputtering of fluorinated silicon Journal of Applied Physics. ,vol. 77, pp. 1263- 1274 ,(1995) , 10.1063/1.358928
Vincent M. Donnelly, Avinoam Kornblit, Plasma etching: Yesterday, today, and tomorrow Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 31, pp. 050825- ,(2013) , 10.1116/1.4819316
Yasuhiro Horiike, Masahiro Shibagaki, Katsuo Kadono, Si and SiO2 etching characteristics by fluorocarbon ion beam. Japanese Journal of Applied Physics. ,vol. 18, pp. 2309- 2310 ,(1979) , 10.1143/JJAP.18.2309
T Nakano, H Sugai, Cross section measurements for electron-impact dissociation of SiF4 into neutral radicals Journal of Physics D. ,vol. 26, pp. 1909- 1915 ,(1993) , 10.1088/0022-3727/26/11/011
Tomoko Ito, Kazuhiro Karahashi, Song-Yun Kang, Satoshi Hamaguchi, Characteristics of silicon etching by silicon chloride ions Journal of Vacuum Science and Technology. ,vol. 31, pp. 031301- ,(2013) , 10.1116/1.4793426