Reversible structural phase transitions in semiconductor and metal/semiconductor surfaces
作者： Arantzazu Mascaraque , Enrique G Michel
DOI: 10.1088/0953-8984/14/24/308
关键词: Condensed matter physics 、 Reflection high-energy electron diffraction 、 Semiconductor 、 Metallurgy 、 Germanium 、 Phase transition 、 Transition metal 、 Carbide 、 Tin 、 Silicon 、 Chemistry
摘要: We review our current understanding of the reversible phase transitions found in clean semiconductor and metal/semiconductor surfaces. The most important are considered detail, particular those appearing Si(001), Ge(001), Si(111), Ge(111), 3C-SiC(001), Pb Sn on Si(111) Au/Si(111) Ag/Si(111). Special emphasis is placed recent experiments theoretical models, as well open or controversial aspects these interesting surface systems.
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