Reversible phase transitions in the pseudomorphic7×3-hex In layer on Si(111)

摘要: Using scanning tunneling microscopy, reversible phase transitions have been detected in the modulated pseudomorphic In monolayer on Si(111) surface. It has found that room-temperature quasihexagonal $\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{3}$ structure is transformed into $\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{7}$ during cooling temperature range from $265\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}225\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Further results developing long-range modulations layer, including formation of chevron-type with $6\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{7}$ periodicity, ordered arrays regular antiphase domain boundaries local $3\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{7}$, and $2\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{7}$ periodicity chained-ring $\frac{10}{3}\sqrt{3}\ifmmode\times\else\texttimes\fi{}\frac{40}{3}\sqrt{3}$ which believed to originate $\frac{5}{3}\sqrt{3}\ifmmode\times\else\texttimes\fi{}\frac{5}{3}\sqrt{3}$ occurring at room near surface defects original $\sqrt{7}\ifmmode\times\else\texttimes\fi{}\sqrt{3}\text{\ensuremath{-}}\mathrm{In}$ phase.