Low-temperature one-atom-layer 7×7-In phase on Si(111)

摘要: Abstract The Si(111)-hex- 7 × 3 -In reconstruction has been attracted considerable attention due to its superconducting properties occurring in the one-atom-layer metal film. However, periodicity is a characteristic feature of this surface only at room temperature. Upon cooling low temperatures structure transforms reversibly one that should not be ignored while considering superconductivity system. In present study, atomic low-temperature Si(111) phase evaluated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and ab initio random searching (AIRSS) technique. Basing on LEED observations, it found incorporates plausibly eight atoms per unit cell (i.e., ~ 1.14 ML In). AIRSS demonstrates occurrence set various structures with very close formation energies. Some their counterparts can experimental STM images.