Dislocation Kink Dynamics in Crystals with Deep Peierls Potential Relief
作者： Yu. L. Iunin , V. I. Nikitenko
DOI: 10.1002/(SICI)1521-396X(199901)171:1<17::AID-PSSA17>3.0.CO;2-2
关键词: Crystallographic defect 、 Solid-state physics 、 Nucleation 、 Instability 、 Peierls stress 、 Crystallography 、 Dislocation 、 Nonlinear system 、 Dynamics (mechanics) 、 Condensed matter physics 、 Materials science
摘要: Institute of Solid State Physics, Russian Academy Sciences, 142432 Chernogolovka,Moscow district, Russia(Received September 7, 1998)Processes the nucleation and motion kinks, determining dislocation mobilities in crystalswith high Peierls barriers, are reviewed. Various mechanisms an influence point defects onthe kink dynamics analyzed. To demonstrate these experimental data pre-sented obtained with two-level intermittent loading Si, Ge, bulk SiGe alloy single crystals.The instability a glide crystals has been discovered, modes revealedof linear nonlinear drift. The analyzed framework ofmodels, considering interaction kink.
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