The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4

作者: Raju Chetty , Jayaram Dadda , Johannes de Boor , Eckhard Müller , Ramesh Chandra Mallik

DOI: 10.1016/J.INTERMET.2014.10.015

关键词: Thermoelectric effectAtmospheric temperature rangeRietveld refinementAnalytical chemistrySeebeck coefficientTetragonal crystal systemChalcogenideMaterials scienceCrystal structureOrthorhombic crystal system

摘要: Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to complexity crystal structure. In present work, stoichiometric compounds Cu2+xCd1-x,GeSe4 (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns all samples showed a tetragonal structure with space group I-42m main phase, whereas x 0 and 0.025 revealed presence an orthorhombic phase addition as confirmed Rietveld analysis. elemental composition characterized Electron Probe Micro Analyzer slight deviation from nominal composition. transport measured temperature range 300 K-723 K. electrical conductivity increased increasing Cu content enhancement hole concentration caused substitution Cd (divalent) (monovalent). positive Seebeck coefficient entire ranges indicates that holes are majority carriers. decreased reverse trend conductivity. total thermal which was dominated lattice contribution. maximum figure merit ZT 0.42 at 723 K obtained for compound Cu2.1Cd0.9GeSe4. (C) 2014 Elsevier Ltd. All rights reserved.

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