Small-signal high-frequency performance of power MOS transistors
作者： P. McGregor , J. Mena , C.A.T. Salama
DOI: 10.1016/0038-1101(84)90148-5
关键词: Bipolar junction transistor 、 Static induction transistor 、 Transistor 、 Field-effect transistor 、 Multiple-emitter transistor 、 Metal gate 、 Power semiconductor device 、 Electrical engineering 、 High-electron-mobility transistor 、 Engineering 、 Electronic engineering
摘要: Abstract The performance of power MOS transistor in high frequency linear applications is investigated this paper. In particular, a model relating structural and layout parameters developed used to investigate the characteristics limitations devices establish which device offers best performance.
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