Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers

摘要: Abstract Rinsing microstructures on a patterned semiconductor wafer is modeled. The simulation results are presented for two cases when the surfaces of trench as microstructure made single material, or different materials. dynamics contaminant removal from and its dependence geometrical structure, physical characteristics surfaces, diffusivity presented. show that in case with materials, cleaning bed strongly depends stacking order When upper material has smaller desorption rate coefficient, transport develops at some point time thickness layers.