Manufacturing method of metal oxide semiconductor device
作者： Ping Liu , Qingtian Ma , Haiyang Zhang
DOI:
关键词: Layer (electronics) 、 Semiconductor device 、 Oxide semiconductor 、 Metal 、 Polycrystalline silicon 、 Etching (microfabrication) 、 Oxide 、 Semiconductor 、 Optoelectronics 、 Materials science
摘要: The invention discloses a manufacturing method for semiconductor device of metal oxide, which comprises: forming dielectric layer on the underlay; polycrystalline silicon said layer; hard mask and patterning it; etching by to form grid; protective grid surface; method; eliminating layer. forms sidewall in side wall grid, has function separating corrosive liquid from thus avoid bottleneck.
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