Manufacturing method of polycrystalline silicon gate and manufacturing method of embedded flash memory

摘要: The invention discloses a manufacturing method of polycrystalline silicon gate and an embedded flash memory. comprises the following steps providing front end structure, wherein structure includes oxide layer; forming first layer covering on thickness is less than or equal to number defined in description; separating patterning photoresist etching so as form through hole, hole exposes using oxygen ion ashing technology remove photoresist; removing layer. By method, condition that crystalline grain boundary oxidized during process can be prevented; quality ensured below avoided from being eroded; acquired increased yield rate too.