作者: Dirk Lorenzen
DOI:
关键词: Laser diode 、 Coating 、 Silicon carbide 、 Tungsten 、 Diode 、 Beryllium oxide 、 Materials science 、 Composite material 、 Boron nitride 、 Nitride
摘要: The invention relates to a semiconductor radiation source (90), for example, diode laser, that is produced by material fit with an edge-emitting component (10), laser bar, having cooling body (70). Said in method which mounting (40) provides the between (10) and In order produce (40), base (20) comprising at least partially tungsten, carbon, silicon carbide, boron nitride, beryllium oxide, or aluminum nitride provided on one of exterior surfaces (21, 22, 23) thereof metal layer (31) metals copper, silver, gold electrochemical coating. Using forming process, superficially obtains even surface (41) face (42). first joining connection attained (42), wherein zone (55) formed comprises section predominately copper group, iron platinoid group compound additional metal. second connected via