Semiconductor memory device having reduced variation of erasing and writing voltages supplied to each memory array

摘要: In a semiconductor memory device comprising plurality of arrays, the array is given predetermined potential from terminal via reference line. Further, source switches are connected to arrays and The selectively transfer each arrays. this case, includes transistor having an electrical ability which determined by length line between switch terminal. When formed MOS transistor, above specified ON resistance transistor. transistors designed so that becomes lower as longer. At any rate, substantially constant voltage supplied irrelevant