Integrated circuit eeprom memory and method of programming the same
作者： Eric Scott Carman , Philippe Raguet , Erwan Hemon
DOI:
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摘要: An integrated circuit EEPROM memory array (5) of thick oxide, single poly cells (10, 20, 30, etc...) has switching circuitry on cell source electrodes (14, 24) to reduce the voltage levels that must be switched when programming (5). The (10, 20, etc...) are also provided with the drain electrodes (16, 26) block voltages. In this way the die area may be significantly reduced, resulting in reduced cost, improved reliability, and improved production yields.
lens.org 参考文章(5)
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