Semiconductor light-emitting device and semiconductor light-emitting apparatus

摘要: A semiconductor light-emitting element having a structure that does not complicate fabrication process, can be formed in high precision and invite any degradation of crystallinity is provided. formed, which includes selective crystal growth layer by selectively growing compound Wurtzite type, clad first conduction an active second are on the wherein so extends parallel to different planes, larger size than diffusion length constituent atom mixed crystal, or has difference at least one composition thickness thereof, thereby forming plurality wavelength region whose emission wavelengths differ from another. The arranged electric current currents chargeable into regions. Because based growth, it realized band gap energy varies within same layer, device without complicating process.