Fabrication of high-density electrical feed-throughs by deep-reactive-ion etching of Pyrex glass
作者： X. Li , T. Abe , Y. Liu , M. Esashi
DOI: 10.1109/JMEMS.2002.805211
关键词: Materials science 、 Wafer bonding 、 Electrical resistance and conductance 、 Anodic bonding 、 Etching (microfabrication) 、 Reactive-ion etching 、 Deep reactive-ion etching 、 Wafer 、 Microelectromechanical systems 、 Optoelectronics
摘要: This paper describes the fabrication technology for high-density electrical feed-throughs in Pyrex glass wafers. Small through holes (40-80 /spl mu/m diameter) wafers have been fabricated using deep-reactive-ion etching (DRIE) a sulfur hexafluoride (SF/sub 6/) plasma. The maximum aspect ratios obtained were between 5 and 7 hole pattern 10 trench pattern. Through wafer of 50 diameter was carried out 150-/spl mu/m-thick by filling through-holes with electroplated nickel. We able to successfully bond silicon anodic bonding after removing nickel on surface chemical-mechanical polishing (CMP). electric resistance feed-through estimated 4 point wire sensing method be about 40 m/spl Omega/ per hole. heat cycles test shows that changes within 3% 100 cycles. high density is one key processes field MEMS. Probable applications this are logic elements microprobe arrays data storage packaged devices.
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