Effect of substrate on NO2-sensing properties of WO3 thin film gas sensors
作者： Dae-Sik Lee , Ki-Hong Nam , Duk-Dong Lee
DOI: 10.1016/S0040-6090(00)01261-X
关键词: Surface finish 、 Microstructure 、 Analytical chemistry 、 Substrate (electronics) 、 Crystal structure 、 Silicon 、 Composite material 、 Operating temperature 、 Materials science 、 Thin film 、 Electrode
摘要: Abstract A WO 3 thin film with a 1.2 μm thickness was deposited onto several substrates, including unpolished alumina, polished and silicon, using thermal evaporating method Pt meander electrodes heater. The films were annealed at 600°C in air for 2 h, thereafter, the microstructure NO -sensing properties of grown on different substrates investigated. alumina exhibited highest sensitivity 10–70 ppm an operating temperature 300°C, whereas silicon substrate showed lowest ppm. crystal structures various nearly same, however, their surface roughnesses very according to kind substrate. is highly dependent roughness since this also main cause modifications morphology sensing film.
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