Growth of tungsten oxide nanowires using simple thermal heating

作者: G.Y. Chen , V. Stolojan , D.C. Cox , C. Giusca , S.R.P. Silva

DOI: 10.1109/NANOEL.2006.1609752

关键词:

摘要: Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene nitrogen mixture. By the ambient, single crystal can be synthesized via a self-assembly mechanism. It was found that yield significantly increased with addition of acetylene, which also results thinner nanowires, as compared to oxidizing ambient. The 5 15nm diameter hundreds nanometers length. In some cases, use process gas would result samples appear visually transparent. Comparison growth acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account effect hydrocarbon proposed.

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