Selective formation of tungsten nanowires
作者： Daniel CS Bien , Rahimah Mohd Saman , Siti Aishah Mohamad Badaruddin , Hing Wah Lee
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摘要: We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten as thin 10 nm were formed by utilizing polysilicon sidewall transfer technology followed selective deposition of chemical vapor (CVD) using WF6 the precursor. With CVD, is self-limiting whereby formation confined to regions; hence, are without need lithography or additional processing. The fabricated observed be perfectly aligned, showing 100% selectivity and can made electrically isolated from one another. electrical conductivity was characterized determine effect its physical dimensions. found 40% higher when compared doped similar
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