Preparation and Gas Sensing Properties of Nanostructured ZnSnO 3 Thin Films

作者: I. G. Pathan , D. N. Suryawanshi , A. R. Bari , D. S. Rane , L. A. Patil

DOI: 10.1007/978-3-642-34216-5_15

关键词: Chemical engineeringSubstrate (electronics)StoichiometryBand gapMaterials scienceChlorideZincPerovskite (structure)Thin filmCrystallinity

摘要: Transparent conducting ZnO:SnO2 and perovskite nanostructured ZnSnO3 thin films have been deposited onto preheated glass substrate by a spray pyrolysis technique using water soluble Zinc chloride Stannic as precursors. A fine of the source solution air carrier gas has grown highly textured films. The concentration precursors are kept fixed their ratio were varied as: 50:50 (wt %), 40:60 %) 30:70 respectively. film samples with compositions of: %)were referred S1, S2 S3 Thin S1 found to be composite ZnO:SnO2. ZnSnO3. crystallinity prepared analyzed X-ray diffraction spectroscopy. diffractogram clearly indicated stoichiometric nature band gap energy was observed 4.00, 4.06 4.13 eV We tested sensing performance S3. H2 response sample is presented. oxides used potential material for stability in thermal chemical atmospheres.

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