Electronic structure of Ni-Al interfaces
作者： C Bonnelle , F Cyrot-Lackmann , P Jonnard , J P Julien , D Mayou
DOI: 10.1088/0031-8949/38/1/017
关键词: Aluminium 、 Electronic structure 、 Tight binding 、 Electron 、 Materials science 、 Metal 、 Density of states 、 Condensed matter physics 、 Emission spectrum 、 Coupling
摘要: Electronic structure of nickel-aluminium interface is studied on both experimental and theoretical sides. Spectral densities states are investigated by electron stimulated X-ray emission spectroscopy, each metal at the being analysed separately. Theoretical obtained using a one tight binding scheme associated with recursion method. Experimental as well results show similar behaviour Ni 3d in bulk. On contrary sp conduction band aluminium differs strongly from bulk one; this change theoretically interpreted coupling Al sp-Ni states.
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