Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy
作者： R. S. Brusa , M. Spagolla , G. P. Karwasz , A. Zecca , G. Ottaviani
DOI: 10.1063/1.1644925
关键词: Plasma-enhanced chemical vapor deposition 、 Analytical chemistry 、 Chemical vapor deposition 、 Elastic recoil detection 、 Thin film 、 Spectroscopy 、 Doppler broadening 、 Positron annihilation spectroscopy 、 Dielectric 、 Materials science
摘要: The 3γ annihilation of orthopositronium and the Doppler broadening positron line have been measured by implanting low energy positrons in dielectric constant (low-k) SiOCH films. evolution stability film porosity with thermal treatments 400–900 °C temperature range has studied. films produced plasma enhanced chemical vapor deposition after annealing N2 atmospheres at 480 °C treated N2+He plasma. minimum free volume pores as-produced samples estimated to correspond that a sphere radius r=0.6 nm. treatment was found seal up 45 nm depth. Both composition (as obtained Rutherford backscattering spectroscopy elastic recoil detection analysis) environment probed were be very stable 600 °C treatment. Above such reduction hydrogen content accompan...
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