A 16 MVA ANPC-PEBB with 6 kA IGCTs

作者: O. Apeldoorn , B. Odegard , P. Steimer , S. Bernet

DOI: 10.1109/IAS.2005.1518429

关键词: VoltageElectrical engineeringConvertersThyristor convertorsEnergy managementEngineeringIntegrated gate-commutated thyristorMVDSFast switching

摘要: The integrated gate commutated thyristor (IGCT) has steadily gained importance on the market since its introduction in 1996. Low on-state voltages and fast switching transients offer …

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