Effect of Zr addition on ZnSnO thin-film transistors using a solution process
作者： Woong Hee Jeong , Hyun Jae Kim , You Seung Rim , Dong Lim Kim
DOI: 10.1063/1.3524514
关键词: Solution process 、 Thin-film transistor 、 Layer (electronics) 、 Threshold voltage 、 Transistor 、 Standard electrode potential 、 Electron mobility 、 Optoelectronics 、 Materials science 、 Wide-bandgap semiconductor
摘要: … The high-binding energy ( O III ) at 532.8 eV was attributed to the presence of loosely bound oxygen on the surface of the thin film due to specific species (eg, – CO 3 or adsorbed H 2 O …
scitation.org
harvard.edu
elsevier.com
aip.org
sci-hub.se 
researchgate.net 参考文章(14)
N. Serpone, D. Lawless, R. Khairutdinov, Size Effects on the Photophysical Properties of Colloidal Anatase TiO2 Particles: Size Quantization versus Direct Transitions in This Indirect Semiconductor? The Journal of Physical Chemistry. ,vol. 99, pp. 16646- 16654 ,(1995) , 10.1021/J100045A026
Jin-Seong Park, KwangSuk Kim, Yong-Gil Park, Yeon-Gon Mo, Hye Dong Kim, Jae Kyeong Jeong, Novel ZrInZnO Thin‐film Transistor with Excellent Stability Advanced Materials. ,vol. 21, pp. 329- 333 ,(2009) , 10.1002/ADMA.200802246
M. Chen, Z.L. Pei, C. Sun, L.S. Wen, X. Wang, Formation of Al-doped ZnO films by dc magnetron reactive sputtering Materials Letters. ,vol. 48, pp. 194- 198 ,(2001) , 10.1016/S0167-577X(00)00302-5
Çetin Kılıç, Alex Zunger, Origins of coexistence of conductivity and transparency in SnO(2). Physical Review Letters. ,vol. 88, pp. 095501- ,(2002) , 10.1103/PHYSREVLETT.88.095501
Elvira Fortunato, Pedro Barquinha, Ana CMBG Pimentel, Alexandra MF Gonçalves, António JS Marques, Rodrigo FP Martins, Luis Pereira, None, Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature Applied Physics Letters. ,vol. 85, pp. 2541- 2543 ,(2004) , 10.1063/1.1790587
Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono, High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering Applied Physics Letters. ,vol. 89, pp. 112123- ,(2006) , 10.1063/1.2353811
C. Terrier, J.P. Chatelon, R. Berjoan, J.A. Roger, Sb-doped SnO2 transparent conducting oxide from the sol-gel dip-coating technique Thin Solid Films. ,vol. 263, pp. 37- 41 ,(1995) , 10.1016/0040-6090(95)06543-1
Bin Cheng, Joette M. Russell, Shi, Lei Zhang, Edward T. Samulski, Large-Scale, Solution-Phase Growth of Single-Crystalline SnO2 Nanorods Journal of the American Chemical Society. ,vol. 126, pp. 5972- 5973 ,(2004) , 10.1021/JA0493244
J. P. Chang, Y-S. Lin, S. Berger, A. Kepten, R. Bloom, S. Levy, Ultrathin zirconium oxide films as alternative gate dielectrics Journal of Vacuum Science & Technology B. ,vol. 19, pp. 2137- 2143 ,(2001) , 10.1116/1.1415513
Jae Kyeong Jeong, Jong Han Jeong, Hui Won Yang, Jin-Seong Park, Yeon-Gon Mo, Hye Dong Kim, High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel Applied Physics Letters. ,vol. 91, pp. 113505- ,(2007) , 10.1063/1.2783961