Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
作者： Elvira Fortunato , Pedro Barquinha , Ana CMBG Pimentel , Alexandra MF Gonçalves , António JS Marques
DOI: 10.1063/1.1790587
关键词: Thin film 、 Optoelectronics 、 Threshold voltage 、 Flexible electronics 、 Transistor 、 Electron mobility 、 Wide-bandgap semiconductor 、 Thin-film transistor 、 Materials science 、 Semiconductor
摘要: … some limitations like: light sensitivity and light degradation, low field effect mobility ( ⩽ 1 cm … with the standard theory of field-effect transistors. The saturation mobility and the threshold …
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