Flash memory device with multiple erase voltage levels
作者： Moo-sung Kim
DOI:
关键词: Cellular array 、 Flash memory 、 Electrical engineering 、 Non-volatile memory 、 Computer hardware 、 Voltage 、 Computer science
摘要: In some embodiments, a string of nonvolatile memory cells may be erased by driving their control gates with erase voltages that have different levels for cells. The divided into two or more groups, and the in each group driven same voltage. another embodiment, device include cell array having groups cells, simultaneously during an operation.
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