作者: Kazuhiro Harasaka , Naoto Jikutani , Toshihiro Ishii , Shunichi Sato
DOI:
关键词: Current (fluid) 、 Resonator 、 Active layer 、 Optics 、 Materials science 、 Semiconductor 、 Optoelectronics 、 Uniaxial crystal 、 Substrate (electronics) 、 Laser 、 Layer (electronics)
摘要: In a surface emitting laser element (100), on substrate (101) whose normal direction of principal is inclined, resonator structural body including an active layer (105), and lower semiconductor DBR (103) upper (107) sandwiching the are stacked. A shape current passing through region (108b) in oxide confinement structure symmetrical to axis center parallel X Y axis, length greater than direction. thickness oxidized (108a) surrounding -Y +X -X directions.